|
Designation
|
Class
|
Temperature
Range
|
Temp-Cap
Change
|
|
Temperature
Compensating
NPO, COG
|
|
|
-55
~ +125
|
±30ppm
|
|
Intermediate
K
X7R, BX
|
||
|
-55
~ +125
|
±15%
|
|
High
K Y5V
|
||
|
-25
~ +85
|
+22
~ -82%
|
|
High
K Z5U
|
||
|
+10
~ +85
|
+22
~ -56%
|
The
T.C curve of each material. (for
reference)
Technology
Multi-layer
Ceramic Capacitor constructed by
depositing alternative layers of
ceramic dielectric materials and
internal metallic electrodes, by
advanced ceramic manufacturing
technology and co-firing into an
indestructible homogeneous body,
then completed with application of
mta and terminations which are
fired on to assure that permanent
connection of individual internal
electrodes are in parallel. The
terminations also can be
nickel-plated and then solder
plated to give the chip capacitors
nickel-barrier terminations which
have much better leaching
resistance during soldering.
Reliable performances are built-in
through exact formulation of
dielectric powders, preperation of
conductive paste, advanced
automatic manufacturing and strict
quality control to assure
excellent control in dielectric
thickness, electrode integrity and
electrode-to-termination
continuity.
NPO
|
Characterizes
|
Test
conditions
|
Requirement
|
| Operation
temp. Range |
|
-55
~ +125
|
| Temp.
Coefficient(TC) |
With
respect to 200C
within
operation temp. Range
|
C>=10pF,±30ppm/0C
|
| Capacitance
tol. |
With
respect to 200C
C<1000pF, IV rms
/1KHz
|
In accordance with spec.
|
Dissipation
Factor
(tan §) |
C,10pF
tan§<=10(3/C
+0.7)x10E-4
or 30 x10E-4 whichever
is less
C>=10pF tan§
<=10 x20E-4
|
| Insulation
Resistance (IR) |
At
Vr (rated voltage)
for 1 minute
|
Rins>100G
or insxC>=1000S
whichever is less
|
| Dielectric
withstanding voltage |
|
No breakdown
|
X7R/Y5V/Z5U
|
Characterizes
|
Test
Conditions
|
Requirements
|
|
X7R
|
Y5V
|
Z5U
|
| Operation
temp. Range |
|
-550C
~ +1250C
|
-250C
~ +850C
|
+100C
~ +850C |
| Temp.
Coefficient (TC) |
NPO/X7R:
With respect to 200C
within operation temp.
range
Y5V/Z5U: With respect to
250C within
operation temp. Range |
±15%
|
|
|
| Capacitance
tol. |
NPO/X7R:
With respect to 200C
Y5V/Z5U: With respect to
250C
C<=1000pF,IVrms / IMHz
C>1000pF,IVrms / IMHz |
In
accordance with spec.
|
Dissipation
Factor
(tan §) |
50V
tan§ <=2.5%
25V
tan§<=3.5%
16V
tan§<=5% |
50V
tan§ <= 5%
25V
tan§<= 7%
16V
tan§<= 9% |
50V
tan§ <= 4%
25V
tan§<= 6%
|
Insulation
Resistance (IR) |
At
Vr (rated voltage)
for 1 minute |
Rins
>100G
or Rins x C
>= 1000S
Whichever is less |
Rins
>10G
or Rins x C
>= 100S
Whichever is less |
Rins
>10G
or Rins x C
>= 1000S
Whichever is less |
| Dielectric
withstanding voltage |
At
2.5Vr (rated voltage)
for 1 minute |
No
breakdown
|
|
